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Propriétés de transistors "Planar" au silicium à de très faibles courants

Author(s):

Medium: journal article
Language(s): French
Published in: Bulletin technique de la Suisse romande, , n. 25, v. 89
Year: 1963
DOI: 10.5169/seals-66359
Structurae cannot make the full text of this publication available at this time. The full text can be accessed through the publisher via the DOI: 10.5169/seals-66359.
  • About this
    data sheet
  • Reference-ID
    10510589
  • Published on:
    26/11/2020
  • Last updated on:
    26/02/2021
 
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