Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
| Author(s): |
V. Talbo
J. Mateos T. González Y. Lechaux N. Wichmann S. Bollaert B. G. Vasallo |
|---|---|
| Medium: | journal article |
| Language(s): | English |
| Published in: | Journal of Physics: Conference Series, October 2015, v. 647 |
| Page(s): | 012056 |
| DOI: | 10.1088/1742-6596/647/1/012056 |
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10671222 - Published on:
12/06/2022 - Last updated on:
12/06/2022
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