Gate leakage tolerant circuits in deep sub-100 nm CMOS technologies
Author(s): |
Ge Yang
Zhongda Wang Sung-Mo Kang |
---|---|
Medium: | journal article |
Language(s): | English |
Published in: | Smart Materials and Structures, February 2006, n. 1, v. 15 |
Page(s): | S21-S28 |
DOI: | 10.1088/0964-1726/15/1/005 |
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10222987 - Published on:
04/12/2018 - Last updated on:
04/12/2018