Effects of annealing conditions on photoelectrical properties of Ba1−xSrxNbyTi1−yO3 thin-film resistor
Author(s): |
B. Li
H. B. Lo P. T. Lai Y. R. Liu G. Q. Li M. Q. Huang |
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Medium: | journal article |
Language(s): | English |
Published in: | Smart Materials and Structures, February 2006, n. 1, v. 15 |
Page(s): | N23-N27 |
DOI: | 10.1088/0964-1726/15/1/n05 |
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10223035 - Published on:
04/12/2018 - Last updated on:
04/12/2018