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Effects of annealing conditions on photoelectrical properties of Ba1−xSrxNbyTi1−yO3 thin-film resistor

Structurae cannot make the full text of this publication available at this time. The full text can be accessed through the publisher via the DOI: 10.1088/0964-1726/15/1/n05.
  • About this
    data sheet
  • Reference-ID
    10223035
  • Published on:
    04/12/2018
  • Last updated on:
    04/12/2018
 
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