Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy /Si interface and gate oxide thickness
| Author(s): |
C. Y. Ng
T. P. Chen C. H. Ang |
|---|---|
| Medium: | journal article |
| Language(s): | English |
| Published in: | Smart Materials and Structures, February 2006, n. 1, v. 15 |
| Page(s): | S39-S42 |
| DOI: | 10.1088/0964-1726/15/1/007 |
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10223003 - Published on:
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04/12/2018
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