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Characteristic enhancement of InGaN-based light emitting diodes grown on pattern sapphire substrates

Author(s):


Medium: journal article
Language(s): English
Published in: IOP Conference Series: Materials Science and Engineering, , v. 758
Conference: 7th International Conference on Mechanical Engineering, Materials Science and Civil Engineering 17–18 December 2019, Sanya, China
Page(s): 012087
DOI: 10.1088/1757-899X/758/1/012087
Copyright: © 2020 Huanyou Wang, Gui Jin, Qiaolai Tan
License:

This creative work has been published under the Creative Commons Attribution 3.0 Unported (CC-BY 3.0) license which allows copying, and redistribution as well as adaptation of the original work provided appropriate credit is given to the original author and the conditions of the license are met.

  • About this
    data sheet
  • Reference-ID
    10433407
  • Published on:
    25/08/2020
  • Last updated on:
    03/07/2021
 
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