Performance Analysis on Effect of Variation in Oxide Material of Double Gate Tunnel Field Effect Transistor
| Author(s): |
Rajeev Bhatia
S. S. Gill |
|---|---|
| Medium: | journal article |
| Language(s): | English |
| Published in: | IOP Conference Series: Materials Science and Engineering, 1 January 2021, n. 1, v. 1033 |
| Page(s): | 012065 |
| DOI: | 10.1088/1757-899x/1033/1/012065 |
| Abstract: |
In this paper structure of Double Gate Tunnel Field Effect Transistor work to increase the efficiency of the device performance of Tunnel Field Effect Transistors making it one of the potential candidates for small scale devices. The essential point of this research work is to consider the performance analysis of the structure. This work is accomplished with the assistance of tool Cogenda TCAD version 1.9.2. The designing of the device, simulation and correlation of results have been gotten on this tool. The section gives the stream of Research Methodology and clarifies the footsteps for Design and Simulation of Double Gate Tunnel Field Effect Transistor. |
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10674882 - Published on:
12/06/2022 - Last updated on:
12/06/2022
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