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The effects of annealing and wake-up cycling on the ferroelectricity of zirconium hafnium oxide ultrathin films prepared by remote plasma atomic layer deposition

Structurae cannot make the full text of this publication available at this time. The full text can be accessed through the publisher via the DOI: 10.1088/1361-665x/ab23c3.
  • About this
    data sheet
  • Reference-ID
    10313660
  • Published on:
    30/06/2019
  • Last updated on:
    26/07/2019
 
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