C. Y. Ng
- Charging/discharging of silicon nanocrystals embedded in an SiO2 matrix inducing reduction/recovery in the total capacitance and tunneling current. Dans: Smart Materials and Structures, v. 15, n. 1 (février 2006). (2006):
- Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy /Si interface and gate oxide thickness. Dans: Smart Materials and Structures, v. 15, n. 1 (février 2006). (2006):