To Analyze Energy Band Diagram of N-Tunnel Field Effect Transistors (NTFET)

In low power consumption devices an emerging device of transistor is Tunnel Field Effect Transistors (TFET).Although MOSFET (Metal Oxide Field Effect Transistors) having applications based on low energy usable electronics devices the power is reduced by reducing supply voltage but by decreasing supply voltage slow down the sub threshold swing. By the down scaling of MOSFET static power become high. As TFET having structure closer to MOSFET and working of TFET is based on p-i-n diode in which tunnel current flows between the source and channel bands. The low value of leakage current and sub threshold swing in TFET is used for low power applications as the switching in TFET is on the principle of modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in MOSFET. The analysis on Energy band diagram of NTFET discussed in this paper.