Pressure sensing of Ga₂O₃ thin film

In this paper, a Ga₂O₃-based pressure sensor is introduced via metalorganic chemical vapor deposition thin film growth technique. As an important semiconductor materials, it could achieve some functional electronics and optoelectronics, while Ga₂O₃-based pressure sensor is less investigated, inspite of that the natural property endows it the possibility. Here, the fabricated Ga₂O₃-based pressure sensor displayed decent sensing performance responding to various pressures. Under pressure of 5 kPa, the current increase two of orders with respect to the current without any additional pressure. Moreover, the response/release times were 0.18 s/0.15 s, 0.27 s/0.21 s, 0.32 s/0.23 s, and 0.38 s/0.24 s under different pressures of 1, 5, 10 and 20 kPa. In all, this work provides a possible route for constructing smart pressure sensor based on functional Ga₂O₃ along with good sensing behaviors.