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Development and Testing of High-temperature Piezoelectric Wafer Active Sensors for Extreme Environments

Autor(en):


Medium: Fachartikel
Sprache(n): Englisch
Veröffentlicht in: Structural Health Monitoring, , n. 6, v. 9
Seite(n): 513-525
DOI: 10.1177/1475921710365389
Abstrakt:

Development of high-temperature piezoelectric wafer active sensors (HT-PWAS) using high-temperature piezoelectric material for harsh environment applications is of great interest for structural health monitoring of high-temperature structures such as turbine engine components, airframe thermal protection systems, and so on. This article presents a preliminary study with the main purpose of identifying the possibility of developing PWAS transducers for high-temperature applications. After a brief review of the state of the art and of candidate high-temperature piezoelectric materials, the article focuses on the use of gallium orthophosphate (GaPO4) samples in pilot PWAS applications. The investigation started with a number of confidence-building tests that were conducted to verify GaPO4piezoelectric properties at room temperature and at elevated temperatures in an oven. Electromechanical (E/M) impedance measurements and material characterization tests (scanning electron microscopy, X-ray diffraction, energy dispersive spectrometry) were performed before and after exposure of HT-PWAS to high temperature; it was found that GaPO4HT-PWAS maintain their properties up to 1300°F (∼705°C). In comparison, conventional PZT sensors lost their activity at around 500 F (∼260°C). Subsequently, HT-PWAS were fabricated and installed on metallic specimens in order to conduct an in situ evaluation of their high-temperature performance. A series of in situ tests were performed using the E/M impedance and pitch-catch methods; the tests were conducted in two situations: (a) before and after exposure to high temperature and (b) inside the oven. The experimental results show that the fabricated HT-PWAS can survive high oven temperatures up to 1300°F (∼705°C) and still present piezoelectric activity. The article also discusses fabrication techniques for high-temperature PWAS applications, including the wiring of the sensor ground and signal electrodes, bond layer adhesive selection, and preparation.

Structurae kann Ihnen derzeit diese Veröffentlichung nicht im Volltext zur Verfügung stellen. Der Volltext ist beim Verlag erhältlich über die DOI: 10.1177/1475921710365389.
  • Über diese
    Datenseite
  • Reference-ID
    10561689
  • Veröffentlicht am:
    11.02.2021
  • Geändert am:
    19.02.2021
 
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